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首页> 外文期刊>Physical Review, B. Condensed Matter >Acoustic waves in finite superlattices: Influence of buffer layers
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Acoustic waves in finite superlattices: Influence of buffer layers

机译:有限超晶格中的声波:缓冲层的影响

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摘要

The influence of buffer layers on acoustic waves of shear horizontal polarization in finite superlattices is investigated here theoretically. Using a Green's-function method, we have obtained closed-form expressions of local and total densities of states as a function of the frequency omega and the wave vector k(parallel to) parallel to the layers. The expressions of the phonon trapping times are also derived and compared to the density of states. Due to the substrate/buffer layer/superlattice interaction, different kind's of localized and resonant discrete modes are found and their properties are investigated. In particular, we show the possibility of finding well-defined guided modes in the buffer layer or in the superlattice depending on whether the velocity of the transverse acoustic waves in the buffer is lower or higher than those in the superlattice and the substrate, respectively. These modes appear as well-defined peaks of the density of states and trapping times. Specific applications of our analytical results are given in this paper for a GaAs (Si) buffer layer embedded between a Si (GaAs) substrate and a finite GaAs-AlAs superlattice. [S0163-1829(99)13003-0]. [References: 48]
机译:从理论上研究了缓冲层对有限超晶格中水平剪切偏振声波的影响。使用格林函数方法,我们获得了状态局部密度和总密度的闭式表达式,该表达式是ω频率和平行于各层的波矢k(与之平行)的函数。声子俘获时间的表达式也被导出并与状态密度进行比较。由于基底/缓冲层/超晶格的相互作用,发现了不同种类的局部和共振离散模式,并研究了它们的性质。特别是,我们展示了根据缓冲区中横向声波的速度分别低于还是高于超晶格和衬底中的横向声波的速度,在缓冲层或超晶格中找到定义明确的导模的可能性。这些模式显示为状态密度和捕获时间的明确定义的峰值。本文针对嵌入在Si(GaAs)衬底和有限GaAs-AlAs超晶格之间的GaAs(Si)缓冲层给出了我们的分析结果的具体应用。 [S0163-1829(99)13003-0]。 [参考:48]

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