Tunable quantum capacitance and magnetic oscillation in bilayer graphene device

摘要

We address the quantum capacitance of a bilayer graphene device in the presence of Rashba spin-orbit interaction (SOI) by applying external magnetic fields and interlayer biases. Quantum capacitance reflects the mixing of the spin-up and spin-down states of Landau levels and can be effectively modulated by the interlayer bias. The interplay between interlayer bias and Rashba SOI strongly affects magnetic oscillations. The typical beating pattern changes tuned by Rashba SOI strength, interlayer bias energy, and temperature are examined as well.