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首页> 外文期刊>Physica, B. Condensed Matter >Simultaneous effects of temperature and pressure on diamagnetic susceptibility of a shallow donor in a quantum antidot
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Simultaneous effects of temperature and pressure on diamagnetic susceptibility of a shallow donor in a quantum antidot

机译:温度和压力对量子解毒剂中浅施主抗磁化率的同时影响

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The effect of temperature and pressure, simultaneously, on the diamagnetic susceptibility and binding energy of a hydrogenic donor impurity at the center of a GaAs/Ga1 _(-x) ~(Alx)As quantum antidot is studied within the effective mass approximation. For this goal, we first analytically solve the Schr?dinger equation to obtain wavefunctions and energy levels. Then, using the electronic states, we can calculate the diamagnetic susceptibility. The results obtained from the present work reveals that (i) the diamagnetic susceptibility increases with increasing pressure, (ii) the diamagnetic susceptibility decreases by increasing temperature, (iii) the value of 〈 ~(r2)〉 decreases with increasing pressure due to the quantum confinement, and (iv) an increase in the pressure enhances the binding energy for a constant temperature.
机译:同时,在有效质量近似条件下,研究了温度和压力对GaAs / Ga1-(-x)〜(Alx)As量子解毒剂中心的氢供体杂质的抗磁化率和结合能的影响。为此,我们首先分析求解薛定er方程,以获得波函数和能级。然后,使用电子状态,我们可以计算出抗磁化率。从本工作获得的结果表明:(i)磁化率随压力的升高而增加;(ii)磁化率随温度的升高而降低;(iii)〈〜(r2)〉的值由于压力的增加而降低。量子约束,以及(iv)压力的增加提高了恒定温度下的结合能。

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