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Excitons in cylindrical GaAs-Ga _(1-x)Al _xAs quantum dots under applied electric field

机译:电场作用下圆柱GaAs-Ga _(1-x)Al _xAs量子点中的激子

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摘要

The exciton binding energy and photoluminescence energy transition in a GaAs-Ga _(1-x)Al _xAs cylindrical quantum dot are studied with the use of the effective mass approximation and a variational calculation procedure. The influence of these properties on the application of an electric field along the growth direction of the cylinder is particularly considered. It is shown that for zero applied field the binding energy and the photoluminescence energy transition are decreasing functions of the quantum dot radius and height. Given a fixed geometric configuration, both quantities then become decreasing functions of the electric field strength as well.
机译:利用有效质量近似和变分计算程序研究了GaAs-Ga _(1-x)Al _xAs圆柱量子点中的激子结合能和光致发光能跃迁。特别要考虑这些特性对沿圆柱体生长方向施加的电场的影响。结果表明,对于零施加场,结合能和光致发光能量跃迁是量子点半径和高度的递减函数。在给定固定的几何构型的情况下,这两个量也将成为电场强度的递减函数。

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