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首页> 外文期刊>Physica, B. Condensed Matter >Characteristics of ZnS nanocolumn arrays and their effect on the light outcoupling of OLEDs
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Characteristics of ZnS nanocolumn arrays and their effect on the light outcoupling of OLEDs

机译:ZnS纳米柱阵列的特性及其对OLED的光输出耦合的影响

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摘要

Wide band gap semiconductor zinc sulfide (ZnS) nanocolumn arrays were prepared on the glass side of ITO substrates by glancing angle deposition (GLAD) technology. The SEM images show the formation of ZnS nanocolumn arrays when the glancing angle was set to 80°; however, continuous ZnS thin films were fabricated under normal deposition (0°). The XRD spectra of the films show that the most intensive diffraction peak changed from (2 2 0) to (1 1 1) when the incidence angle was set to 0° and 80°. The transmitting ability of ITO substrate coated with ZnS nanocolumn arrays was enhanced compared with continuous ZnS thin films coated ITO substrate and bare ITO substrate in the visible range. Organic light emitting diodes (OLEDs) were simultaneously fabricated on these three kinds of substrates. The electroluminescence (EL) intensity of OLEDs based on the ITO substrate coated with ZnS nanocolumn arrays was about 1.3 times bigger than that of devices based on the other substrates (continuous ZnS film coated ITO substrates and bare ITO substrates) under the same driving voltage.
机译:通过掠角沉积(GLAD)技术在ITO基板的玻璃侧制备了宽带隙半导体硫化锌(ZnS)纳米柱阵列。扫描电镜图像显示了当掠射角设为80°时ZnS纳米柱阵列的形成。然而,连续ZnS薄膜是在常规沉积(0°)下制备的。薄膜的X射线衍射图谱表明,当入射角分别设为0°和80°时,最强的衍射峰从(2 2 0)变为(1 1 1)。与在可见光范围内连续涂覆ZnS薄膜的ITO衬底和裸ITO衬底相比,涂覆ZnS纳米柱阵列的ITO衬底的透射能力得到了增强。在这三种基板上同时制造有机发光二极管(OLED)。在相同的驱动电压下,基于ZnS纳米柱阵列涂覆的ITO基板的OLED的电致发光(EL)强度是基于其他基板(连续ZnS膜涂覆的ITO基板和裸ITO基板)的器件的电致发光强度(EL)约1.3倍。

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