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Nanocystalline ZnO films prepared via polymeric precursor method (Pechini)

机译:通过聚合物前驱体方法制备的纳米囊藻氧化锌薄膜(Pechini)

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摘要

The polymeric precursor method (Pechini) was employed to prepare high-quality nanocrystalline zinc oxide (ZnO) films. Briefly, the process started off with the preparation of a coating solution by the Pechini process followed by a coating of the glass substrates by a dip-coating technique and subsequent heat-treatment of the as-deposited films up to 550 °C for 30 min. The Rietveld profile analysis of the X-ray diffraction (XRD) spectra revealed the wrzite structure as expected for ZnO with a P6_3mc symmetry. No additional peaks were observed that would correspond to any secondary crystalline phase. The average crystallites size was 20 nm as calculated by Sherrer's equation. UVvis spectroscopy showed sharp ultraviolet absorption edges at ~380 nm. The absorption edge analysis yielded optical band gap energy of 3.24 eV with electronic transition of the direct transition type. The Fourier transform infrared (FTIR) analysis showed asymmetric and symmetric stretching modes of the carboxyl group (CO). Scanning electron microscope (SEM) analysis revealed a crack-free surface morphology indicating that coating of the amorphous glass substrates was homogeneous on large surface areas. The temperature dependent conductivity featured a typical semiconducting-like behavior with resistivity approaching 3×10~(-1) Ω cm at 220 K.
机译:采用聚合物前驱体方法(Pechini)制备高质量的纳米晶体氧化锌(ZnO)薄膜。简而言之,该工艺开始于通过Pechini工艺制备涂料溶液,然后通过浸涂技术涂覆玻璃基材,然后对沉积的薄膜进行最高550°C的热处理30分钟。 X射线衍射(XRD)光谱的Rietveld轮廓分析揭示了具有P6_3mc对称性的ZnO所期望的菱锌矿结构。没有观察到与任何次级结晶相对应的其他峰。通过谢勒方程计算的平均微晶尺寸为20nm。紫外可见光谱在〜380 nm处显示出明显的紫外线吸收边缘。吸收边缘分析产生的光带隙能量为3.24 eV,具有直接跃迁类型的电子跃迁。傅里叶变换红外(FTIR)分析显示了羧基(CO)的不对称和对称拉伸模式。扫描电子显微镜(SEM)分析显示无裂纹的表面形态,表明无定形玻璃基材的涂层在大表面积上是均匀的。温度依赖性电导率具有典型的半导体性质,在220 K时电阻率接近3×10〜(-1)Ωcm。

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