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Search for Nagaoka ferromagnetism in non-magnetic doped semiconductors

机译:在非磁性掺杂半导体中寻找长冈铁磁性

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While ferromagnetism at relatively high temperatures is seen in diluted magnetic semiconductors such as Ga1-xMnxAs, under certain conditions semiconductors doped with non-magnetic impurities may also exhibit a ferromagnetic ground state. We investigate the possibility of ferromagnetism in a generalized disordered Hubbard model designed to characterize hydrogenic centers in semiconductors. We demonstrate the occurrence of high spin ground states in clusters (e.g. doped quantum dots), and discuss the nature of the single-particle states in a positionally disordered three-dimensional system with a maximally spin-polarized ground state. In particular, we identify the mobility edges, and describe their dependence on impurity density and potential. (C) 2007 Elsevier B.V. All rights reserved.
机译:尽管在诸如Ga1-xMnxAs之类的稀释磁性半导体中可以看到较高温度下的铁磁性,但在某些条件下,掺杂有非磁性杂质的半导体也可能会呈现铁磁性基态。我们研究了广义无序哈伯德模型中铁磁性的可能性,该模型旨在表征半导体中的氢中心。我们证明了簇中高自旋基态的发生(例如掺杂的量子点),并讨论了具有最大自旋极化基态的位置无序三维系统中单粒子态的性质。特别是,我们确定了迁移率边缘,并描述了它们对杂质密度和电势的依赖性。 (C)2007 Elsevier B.V.保留所有权利。

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