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Tuning the bottleneck effect in Ag metallic host doped with magnetic Gd and non-magnetic Sb ions

机译:调整掺有磁性Gd和非磁性Sb离子的Ag金属基质中的瓶颈效应

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摘要

The Ag metallic host doped with Gd and Sb is an excellent model system to study the bottleneck effect associated to the conduction-electron (c-e) spin-flip scattering mechanism. Electron spin resonance of Gd3+ in both, Ag-(Gd doped)- and Ag-(Gd and Sb doped)-systems, reveal the presence of bottleneck which can be tuned by the amount of Gd and Sb impurities. The increase of the Gd concentration leads to a c-e spin-flip relaxation rate to the magnetic Gd3+ ions larger than that to the lattice, favoring the bottleneck regime. Whereas the effect of the non-magnetic impurities (Sb ions) is to increase, via spin-orbit scattering, the spin-flip relaxation rate of the c-e to the lattice, weakening the bottleneck regime.
机译:掺有Gd和Sb的Ag金属基质是研究与传导电子(c-e)自旋翻转散射机制相关的瓶颈效应的出色模型系统。在Ag-(掺杂Gd)-和Ag-(Gd和Sb掺杂)系统中,Gd3 +的电子自旋共振揭示了瓶颈的存在,可以通过Gd和Sb杂质的量来调节瓶颈。 Gd浓度的增加会导致磁性Gd3 +离子的c-e自旋翻转弛豫速率大于晶格的c-e自旋翻转弛豫速率,有利于瓶颈机制。非磁性杂质(Sb离子)的作用是通过自旋轨道散射增加c-e到晶格的自旋翻转弛豫速率,从而削弱瓶颈状态。

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