Glass transition behavior of binary GaxSe100?x (0x10) glass systems

摘要

The glass transition behavior of glassy GaxSe100?x (x=0, 2.5, 5, 7.5 and 10) systems were investigated using differential scanning calorimetry (DSC). The variation of glass transition temperature, Tg, with Ga concentration has been studied. The value of activation energy of glass transition, Eg, has been found to increase with increase in Ga content. This increase in Eg has been explained in terms of the average heat of atomization for these glasses.