Low cross-talk 2 × 2 silicon electro-optic switch matrix with a double-gate configuration

摘要

In this study, a low cross-talk 2 × 2 silicon electro-optic switch matrix based on a double-gate configuration is proposed and experimentally demonstrated. The switch matrix consists of four Mach-Zehnder-based 2 × 2 switching elements with 400 μm long modulation arms. Low cross-talk values of -31 and -43 dB are, respectively, obtained for the "cross" and "bar" states over a 40 nm wide wavelength range around 1550 nm. The values for the total steady-state power consumption of the "cross" and "bar" states are 40.8 and 19.1 mW, respectively.