High-power diode-pumped cryogenically cooled Yb:CaF_(2) laser with extremely low quantum defect

摘要

High-power diode-pumped laser operation at 992-993nm under a pumping wavelength of 981 of 986nm is demonstrated with Yb:CaF_(2) operating at cryogenic temperature (77 K), leading to extremely low quantum defects of 1.2percent and 0.7percent, respectively. An average output power of 33 W has been produced with an optical efficiency of 35percent. This represents, to the best of our knowledge, the best laser performance ever obtained at such low quantum defects on intense laser lines.