Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

摘要

A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M~(2) is 2.0 with the output power of 1.27 W.