Effect of few-layer graphene films as electrodes on the electrical properties of ferroelectric capacitors

摘要

Electrode materials have a great influence on the performance of ferroelectric film capacitors, and it is still a challenge to find new electrode materials. In this work, highly conductive few-layer graphene (FLG) films were prepared on the surface of the PZT films as top electrodes by dip coating and mechanical exfoliation and their effect on the electric properties of the PZT film capacitors were investigated. The polarization property of the FLG/PZT/Pt capacitor is almost the same as that of the Pt/PZT/Pt capacitor. However, the magnitude of leakage current density for the FLG/PZT/Pt capacitor is largely decreased due to the van der Waals (vdW) gap at the FLG/PZT interface. The FLG films have relatively little oxygen functional groups due to the microwave irradiation treatment, and are more suitable for utilization as the electrode of the PZT capacitors compared with the few-layer-graphene oxide (FLGO) films. Our results demonstrate that the FLG films might be a promising electrode material for application in integrated ferroelectric devices.