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Preparation and Characterization of Silver Substrates Coated with Antimony-Doped SnO2 Thin Films for Surface Plasmon Resonance Studies

机译:表面等离子体共振研究的掺锑SnO2薄膜银基底的制备与表征

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This paper reports on the preparation of silver/antimony-doped tin oxide (Ag/SnO2:Sb) hybrid interfaces using magnetron sputtering and their characterization. The influence of the Sri target composition (doping with 2 or 5% Sb) on the electrochemical and electrical characteristics of the hybrid interface wits investigated using X-ray photoelectron spectroscopy (XPS), sheet resistance measurements, cyclic voltammetry, scanning tunneling microscopy (STM) and surface plasmon resonance (SPR). The best interface in terms of electrical conductivity and SPR signal is a hybrid interface with a 8.5 +/- 0.3 nm thick SnO2:Sb layer obtained from a Sri target with 2% Sb deposited on 38 nm thick silver film. Different strategies to link functional groups onto the Ag/SnO2:Sb interface are also presented.
机译:本文报道了使用磁控溅射制备银/掺杂锑的氧化锡(Ag / SnO2:Sb)杂化界面及其表征。使用X射线光电子能谱(XPS),薄层电阻测量,循环伏安法,扫描隧道显微镜(STM)研究了Sri靶组成(掺杂2%或5%的Sb)对混合界面机体的电化学和电学特性的影响)和表面等离振子共振(SPR)。就电导率和SPR信号而言,最好的界面是混合界面,其混合层具有8.5 +/- 0.3 nm厚的SnO2:Sb层,该层是从Sri靶材获得的,其中2%Sb沉积在38 nm厚的银膜上。还介绍了将官能团链接到Ag / SnO2:Sb界面的不同策略。

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