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首页> 外文期刊>Nanotechnology >Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer
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Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer

机译:Co2Fe6B2固定层的面心立方纹理化对堆叠有[Co / Pd](n)-SyAF层的Co2Fe6B2 / MgO基p-MTJ自旋阀中隧穿磁阻比降低的影响

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摘要

The TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (T-ex) was increased from 275 to 325 degrees C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 degrees C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd](n)-SyAF, abruptly reducing the Delta(1) coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer.
机译:当异位磁性退火温度(T-ex)从275摄氏度提高到325摄氏度时,堆叠有[Co / Pd](n)-SyAF层的Co2Fe6B2 / MgO基p-MTJ自旋阀的TMR比迅速降低,并且这种降低与Co2Fe6B2固定层而不是Co2Fe6B2游离层的降解有关。在高于325摄氏度的Tex温度下,无定形Co2Fe6B2固定层转变为由[Co / Pd](n)-SyAF织构的面心立方(fcc)晶体层,从而突然减小了垂直方向的Delta(1)相干隧穿(100)MgO隧穿势垒和fcc Co2Fe6B2固定层之间的自旋电子。

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