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Si nanowire directly grown on a liquid metal substrate—towards wafer scale transferable nanowire arrays with improved visible-light sterilization

机译:硅纳米线直接生长在液态金属衬底上,朝着晶圆级可转移纳米线阵列发展,具有改进的可见光灭菌

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摘要

Integrating vertically aligned nanowires (NWs) on a functional substrate is important for the application of NWs in wafer scale assemblies and functional devices. However, vertically aligned NWs via the current epitaxial growth route can only be prepared on crystalline wafers. A convenient method is thus presented to overcome NW substrate limitations. Liquid metal is proposed to serve as a substrate for the initial growth of vertically aligned NWs. NWs could then be harvested from the growth substrate and integrated with functional substrates. Fabricated vertically aligned silicon NWs (SiNWs) were grown on molten Sn and then integrated into a flexible transparent poly(dimethylsiloxane) film to obtain a SiNW/functional substrate device. The device showed enhanced visible-light absorption ability and refreshable visible-light bactericidal activities with a bacterial reduction rate of close to 100%, indicating that growth with molten metal as a substrate could be a promising approach for extending the function and application of NWs.
机译:将垂直排列的纳米线(NW)集成在功能性基板上对于将NW应用于晶圆级组件和功能性设备非常重要。但是,通过当前的外延生长途径垂直排列的NW只能在晶体晶片上制备。因此提出了一种方便的方法来克服NW衬底的限制。提议使用液态金属作为垂直排列NW初始生长的基底。然后可以从生长基质中收获NW,并与功能基质整合。将制造的垂直排列的硅NW(SiNWs)在熔融的Sn上生长,然后集成到柔性透明聚二甲基硅氧烷膜中,以获得SiNW /功能性衬底器件。该装置显示出增强的可见光吸收能力和可刷新的可见光杀菌活性,细菌减少率接近100%,表明以熔融金属为底物的生长可能是扩展NW功能和应用的有前途的方法。

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