Nanostructures of n-Type Organic Semiconductor in a p-Type Matrix via Self-Assembly of Block Copolymers

摘要

There has been an increasing interest in the morphology of organic semiconductors in film because of its strong influence on the performance of devices using these materials.Especially for electrooptical applications like light-emitting diodes and solar cells,an increase in the interface area between the electron(ETM)and the hole transport material(HTM)could enhance the performance since the interface is the active area for charge recombination or separation.