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首页> 外文期刊>Electrochimica Acta >Fabricating CuS counter electrode for quantum dots-sensitized solar cells via electro-deposition and sulfurization of Cu2O
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Fabricating CuS counter electrode for quantum dots-sensitized solar cells via electro-deposition and sulfurization of Cu2O

机译:通过Cu2O的电沉积和硫化制备用于量子点敏化太阳能电池的CuS对电极

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摘要

CuS/FTO counter electrode (CE) with flower-like nonosheets structure was fabricated through electro-deposition of Cu2O followed by sulfurization. This electrochemical method has better control over the morphology of CuS/FTO CE. And the application of FTO can avoid the continuous corrosion of Cu substrate in polysulfide electrolyte. Besides, through the optimization of electro-deposition, the CuS/FTO CE obtains excellent photoelectrochemical performance (photoelectric conversion efficiency (PCE) = 4.07%, fill factor (ff) = 0.50) which is much higher than Pt CE (PCE = 1.90%) and Cu2S/Cu CE (PCE = 3.76%) prepared by directly immersing copper into polysulfide electrolyte. Therefore, the CuS/FTO CE prepared by electro-deposition of Cu2O followed by sulfurization has shown much promise. (C) 2015 Elsevier Ltd. All rights reserved.
机译:通过电沉积Cu2O,然后进行硫化,制备了具有花状非片状结构的CuS / FTO对电极(CE)。这种电化学方法可以更好地控制CuS / FTO CE的形貌。 FTO的应用可以避免多硫化物电解液中铜基体的连续腐蚀。此外,通过优化电沉积,CuS / FTO CE获得了优异的光电化学性能(光电转换效率(PCE)= 4.07%,填充系数(ff)= 0.50),远高于Pt CE(PCE = 1.90%) )和直接将铜浸入多硫化物电解质中制得的Cu2S / Cu CE(PCE = 3.76%)。因此,通过电沉积Cu2O然后硫化制得的CuS / FTO CE具有很大的前景。 (C)2015 Elsevier Ltd.保留所有权利。

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