Compact InGaAsP/InP 3 x 3 multimode-interference coupler-based electro-optic switch

摘要

Optical switches are key components in data links for optical communication networks requiring low crosstalk and insertion loss, high switching speed, and power efficiency. A multimode-interference (MMI)-coupler-based switch with multiple inputs and outputs serving as a switching unit is desired toward forming a large-scale switch matrix. Here we demonstrate a compact 3 x 3 MMI coupler electro-optic switch based on the carrier injection effect on InGaAsP/InP substrates. This switch device is 2780 mu m long by 18 mu m wide. The switching states can be controlled by two index-modulation regions through applied bias voltages. Our simulation results show that the device exhibits low crosstalk of < -22 dB, high extinction ratio of greater than or similar to 23 dB, low electrical switching energy of similar to 2.0 pJ/bit, maximum operational frequency of similar to 1.0 GHz, and optical bandwidth of similar to 20 nm in the C band. We experimentally validated one of the switching states on a fabricated device with maximum current injections of similar to 25 mA under combined bias voltages of similar to 2.5 and similar to 3.0 V. Such monolithic integration schemes make them an ideal candidate for future on-chip photonic integrated circuits. (C) 2016 Optical Society of America