High-power passively mode-locked laser at 1062.4 nm based on Nd:LaGGG disordered crystal

摘要

A diode-pumped passively continuous-wave mode-locked Nd:(LaxGd1-x)(3)Ga5O12 (Nd:LaGGG) laser at 1062.4 nm with a semiconductor saturable absorber mirror was demonstrated for the first time, to the best of our knowledge. Pulses with duration of 12.78 ps were produced at a repetition rate of 59.8 MHz. A maximum average mode-locked output power of 3.18 W was obtained at the absorbed pumped power of 10.12 W, corresponding to a slope efficiency of 35.7% and a peak power of 4.2 kW. As far as we know, this is the highest power obtained in the passively mode-locking operation with Nd3+-doped disordered garnet crystals. (C) 2015 Optical Society of America