Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50percent in the near to far ultraviolet range for single photon counting applications

摘要

We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100percent internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50percent external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed.