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Model for Interpreting Surface Crystallization Using Quartz Crystal Microbalance: Theory and Experiments

机译:石英晶体微天平解释表面结晶的模型:理论与实验

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Surface crystallization of calcium sulfate was investigated using a dissipation crystal quartz microbalance (QCM-D) together with microscopy to understand the mechanical property changes occurring during the growth process. The use of optical microscopy and SEM revealed that needle-shaped crystals grow as dusters on the QCM sensor's surface, not in uniform layers. As crystallization growth progressed, QCM-D revealed inversions between negative and positive frequency shifts. This behavior, a function of the growth of crystals in dusters, is not adequately predicted by existing models. As such, a new mass-to-frequency conversion model is proposed herein to explain the observed frequency inversions. This model is derived from a lumped element approach with point-contact loading and Mason equivalent circuit theory. Critically, the physical phenomena occurring form the basis of the model, particularly addressing the three sources of impedance. When a crystal nucleates and grows, its inertial impedance is considered along with a Kelvin-Voigt link with a hydration layer. A comparison between the proposed model and experimental data, of both frequency and dissipation data for the first four harmonics, shows good agreement for the supersaturations (S = C/C*) of S = 3.75, S = 3.48, and S = 3.22. Additionally, significant improvements over existing models for the case of surface crystallization are observed. The proposed model was therefore able to explain that frequency inversions are caused by a shift from inertia-dominated to elastic-dominated impedance, occurring as a result of crystal growth. Using the nucleation induction time and nucleation rates, determined with imaging, an additional understanding of the crystals' mechanical properties (stiffness and dampening) was obtained.
机译:使用耗散晶体石英微量天平(QCM-D)和显微镜对硫酸钙的表面结晶进行了研究,以了解其在生长过程中发生的机械性能变化。光学显微镜和SEM的使用表明,针状晶体会随着QCM传感器表面上的灰尘而生长,而不是均匀分布。随着结晶生长的进行,QCM-D显示出负向和正向频移之间的反转。现有模型无法充分预测这种行为,它是除尘器中晶体生长的函数。因此,本文提出了新的质量频率转换模型来解释观察到的频率反转。该模型源自具有点接触负载和梅森等效电路理论的集总元件方法。至关重要的是,发生的物理现象构成了模型的基础,尤其是解决了三个阻抗源。当晶体成核并生长时,考虑其惯性阻抗以及带有水合层的开尔文-沃格特链。所提出的模型与前四个谐波的频率和损耗数据的实验数据之间的比较表明,对于S = 3.75,S = 3.48和S = 3.22的过饱和度(S = C / C *),具有良好的一致性。另外,对于表面结晶的情况,观察到了相对于现有模型的显着改进。因此,所提出的模型能够解释频率倒转是由晶体生长导致的从惯性主导的阻抗转变为弹性主导的阻抗引起的。使用通过成像确定的成核诱导时间和成核速率,可以进一步了解晶体的机械性能(刚度和阻尼)。

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