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首页> 外文期刊>Blood: The Journal of the American Society of Hematology >High-throughput immunoglobulin repertoire analysis distinguishes between human IgM memory and switched memory B-cell populations.
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High-throughput immunoglobulin repertoire analysis distinguishes between human IgM memory and switched memory B-cell populations.

机译:高通量免疫球蛋白库分析可区分人类IgM记忆和开关记忆B细胞群。

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摘要

B-cell receptor (BCR) diversity is achieved centrally by rearrangement of Variable, Diversity, and Joining genes, and peripherally by somatic hypermutation and class-switching of the rearranged genes. Peripheral B-cell populations are subject to both negative and positive selection events in the course of their development that have the potential to shape the BCR repertoire. The origin of IgM(+)IgD(+)CD27(+) (IgM memory) cells is controversial. It has been suggested that they may be a prediversified, antigen-independent, population of cells or that they are a population of cells that develop in response to T-independent antigens. Most recently, it was suggested that the majority of IgM memory cells are directly related to switched memory cells and are early emigrants from the germinal center reaction. Advances in sequencing technology have enabled us to undertake large scale IGH repertoire analysis of transitional, naive, IgM memory and switched memory B-cell populations. We find that the memory B-cell repertoires differ from the transitional and naive repertoires, and that the IgM memory repertoire is distinct from that of class-switched memory. Thus we conclude that a large proportion of IgM memory cells develop in response to different stimuli than for class-switched memory cell development.
机译:B细胞受体(BCR)多样性是通过可变,多样性和连接基因的重排集中实现的,而体细胞超突变和重排基因的类别切换是通过外围实现的。外周血B细胞群体在其发展过程中会经历阴性和阳性选择事件,这些事件可能会影响BCR的组成。 IgM(+)IgD(+)CD27(+)(IgM记忆)细胞的起源是有争议的。已经提出它们可以是预分散的,不依赖抗原的细胞群,或者它们是响应于T不依赖抗原而发育的细胞群。最近,有人提出大多数IgM记忆细胞与开关记忆细胞直接相关,并且是生发中心反应的早期移出物。测序技术的进步使我们能够对过渡性,天然,IgM记忆和开关记忆B细胞群体进行大规模的IGH库分析。我们发现,记忆B细胞记忆库不同于过渡记忆库和幼稚记忆库,并且IgM记忆记忆库不同于类切换记忆库。因此,我们得出的结论是,与类别转换存储单元的发展相比,响应不同的刺激,IgM存储单元的发展很大。

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