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Single-Mode Operation of GaAsP Ring / Fabry-Perot Composite Cavity Semiconductor Lasers

机译:GaAsP环形/法布里-珀罗复合腔半导体激光器的单模工作

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摘要

We designed and fabricated ring / Fabry-Perot composite cavity semiconductor lasers. Single mode lasing under CW operation was accomplished. The threshold current was 140 mA, and an output power of 12 mW was obtained at an injection current of 250 mA. A side mode suppression ratio (SMSR) higher than 25 dB was also obtained. The temperature coefficient of the lasing wavelength of 0.23 nm/K was explained by considering the temperature coefficient of the band gap energy of the quantum well.
机译:我们设计并制造了环形/法布里-珀罗复合腔半导体激光器。在连续波操作下完成了单模激光。阈值电流为140 mA,在250 mA的注入电流下获得12 mW的输出功率。还获得了高于25 dB的边模抑制比(SMSR)。通过考虑量子阱的带隙能量的温度系数来解释激光波长为0.23nm / K的温度系数。

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