Low threshold operation of 1.5μm wavelength strain-compensated GaInAsP/InP multiple wirelike laser fabricated by low-damage CH{sub}4/H{sub}2 dry etching and regrowth

摘要

GaInAsP/InP strain-compensated five-quantum-well wirelike lasers with a period of 100 nm and the wire width of 43 nm were fabricated by EB lithography, CH{sub}4/H{sub}2-reactive ion etching and organo-metallic-vapor-phase-epitaxial regrowth. As a result, lower threshold current density and higher differential quantum efficiency than those of quantum-film lasers prepared on the same wafer were obtained (cavity length L=1.24 mm and stripe width W{sub}s=20 μm) up to 80℃. Spontaneous emission spectra and material gain spectra were measured, but there was no noticeable difference in these lasers. These results indicate that high-performance of wirelike lasers is attributed to a clear volume effect and above-mentioned method is very promising for low-damage fabrication of ultra fine structure.