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首页> 外文期刊>電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials >A new multiple transistor parameter design methodology based on a SoC performance evaluation function
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A new multiple transistor parameter design methodology based on a SoC performance evaluation function

机译:基于SoC性能评估功能的新型多晶体管参数设计方法

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摘要

For scaled low voltage CMOS, V{sub}(TH), V{sub}(DD) and T{sub}(OX) must be highly optimized to achieve both low power and high speed. To perform such optimization for complex system-on-a-chip's (SoCs) consisting of multiple blocks, and using multiple V{sub}(TH), V{sub}(DD) and T{sub}(OX), a new performance evaluation function is proposed. It was confirmed that optimized assignment of multiple V{sub}(TH), V{sub}(DD) and T{sub}(OX) can be automatically determined by simply evaluating or searching for the minimum of the function. It was also found that the use of multiple parameters is particularly effective for SoCs consisting of circuit blocks with different speed requirements.
机译:对于缩放的低压CMOS,必须高度优化V {sub}(TH),V {sub}(DD)和T {sub}(OX)才能实现低功耗和高速。为了对由多个模块组成的复杂片上系统(SoC)进行优化,并使用多个V {sub}(TH),V {sub}(DD)和T {sub}(OX),提出了绩效评估功能。已经证实,可以通过简单地评估或搜索函数的最小值来自动确定多个V {sub}(TH),V {sub}(DD)和T {sub}(OX)的优化分配。还发现,对于由具有不同速度要求的电路块组成的SoC,使用多个参数特别有效。

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