Action of the laser beam (lambda=0.694 mu m, fluence 2-25 J/cm~2) on the surface (111)Ge single crystal has been investigated. It was established that the maximum shear strain near the melted zone is created by a defocused laser beam. Heat conductivity equation for the case of pulsed laser irradiation of semiconductor surface was solved by numerical method and isotherm contours were obtained which allow to calculate a strain field in the subsurface layer.
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