Fabrication and Development of High-Power Diode-End-Pumped Nd-Doped Crystal Laser

摘要

High-power diode-end-pumped solid-state laser plays an important role in a variety of fundamental scientific and industrial fields. In this report, we introduce several methods for power scaling in diode-end-pumped Nd-doped crystal laser system, and the pros and the cons for each approach are comprehensively analyzed, particularly for the issue of improving beam quality. Among which, we have originally designed a Nd:YVO_4 crystal with multiple doping concentration to realize a high-power diode-end-pumped continuous-wave laser at 1064 nm with the output power of nearly 100 W, where the beam quality is better than 2. We also discuss the potential application and prospect for such light source.