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首页> 外文期刊>Journal of the Physical Society of Japan >Switching of Conducting Planes by Partial Dimer Formation in IrTe_2
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Switching of Conducting Planes by Partial Dimer Formation in IrTe_2

机译:IrTe_2中部分二聚体形成对导电平面的转换

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摘要

Single-crystal X-ray diffraction was employed to study the structural-electronic phase transition of IrTe_2 at approximately 270 K. The low-temperature structure was found to be a triclinic (space group P1) characterized by the partial formation of Ir_2 dimers in the triangular lattice of IrTe_2, resulting in a structural modulation with a wave vector of q = (1/5,0, -1/5). First-principles band calculations demonstrate that tilted two-dimensional Fermi surfaces emerge in the triclinic phase, suggesting that switching of the conducting planes occurs from the basal plane of the trigonal IrTe_2 to the tilted plane normal to q of the triclinic IrTe_2.
机译:用单晶X射线衍射研究IrTe_2在约270 K时的结构电子相变。发现低温结构为斜晶体(空间群P1),其特征是在反应室中部分形成Ir_2二聚体。 IrTe_2的三角形晶格,导致结构调制的波矢量为q =(1 / 5,0,-1/5)。第一性原理带计算表明,倾斜的二维费米表面出现在三斜相中,这表明导电平面从三角形IrTe_2的基面向垂直于三斜IrTe_2 q的倾斜面发生了转换。

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