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首页> 外文期刊>Journal of the Physical Society of Japan >Scattering-based stochastic process attracting electrons inward under antiparallel gradient magnetic fields
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Scattering-based stochastic process attracting electrons inward under antiparallel gradient magnetic fields

机译:基于散射的随机过程在反平行梯度磁场下吸引电子向内

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摘要

Electron gyration and scattering in a gas under antiparallel gradient magnetic fields (APGMFs) and rf electric field were simulated using a Monte Carlo method to identify the factors of the electron confinement effect of the APGMFs. The inward shift of the gyrocenter at electron scattering worked as an additional factor to electron meandering, which has been regarded as the primary factor of the electron confinement. This scattering-based inward electron attraction occurs by a simple principle that the gyroradius and residence time of electrons become greater under weaker magnetic fields in the inner region of the APGMFs.
机译:使用蒙特卡罗方法模拟了在反平行梯度磁场(APGMFs)和rf电场下气体中的电子旋转和散射,以确定了APGMFs电子约束效应的因素。陀螺中心在电子散射处的向内移动是电子弯曲的附加因素,这已被认为是电子约束的主要因素。这种基于散射的向内电子吸引是通过一个简单的原理发生的,即在APGMFs的内部磁场较弱的情况下,电子的陀螺半径和停留时间会变长。

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