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首页> 外文期刊>Journal of the Physical Society of Japan >Fundamental Influence of C on Cohesion of Pd/TiAl Interfaces
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Fundamental Influence of C on Cohesion of Pd/TiAl Interfaces

机译:C对Pd / TiAl界面内聚力的根本影响

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摘要

First-principles calculations reveal that for Pd/TiAl interfaces the doping of C atoms at the surface centers of Pd interface layers could both increase the bond strength by a factor of 2 and decrease the interface energy by a factor of 3, suggesting that C would be a good doping candidate of increasing the lifetime of Pd/TiAl membranes. Calculations also show that although the addition of C atoms decreases the interface bond strength of Pd-Al and Pd-Ti bonds, the extra interface Ti-C and AI-C bonds are strong enough to induce the strengthening effect of the C doping.
机译:第一性原理计算表明,对于Pd / TiAl界面,在Pd界面层表面中心处掺杂C原子既可以使键合强度提高2倍,又可以使界面能降低3倍,这表明C可以是增加Pd / TiAl膜寿命的良好掺杂候选物。计算还表明,尽管添加C原子会降低Pd-Al和Pd-Ti键的界面键强度,但额外的界面Ti-C和AI-C键足以引起C掺杂的增强作用。

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