Electrical and Optical Properties of Ga-Doped ZnO Films Grown onGlass and Plastic Substrates by Using Plasma-Assisted Deposition

摘要

Ga-doped zinc-oxide (GZO) films grown under various Ga/Zn supply ratios were carefully char-acterized by using Hall measurements and optical transmittance measurements to investigate theelectrical and the optical properties of the GZO films on glass, polyethylene terephthalate (PET),and polycarbonate (PC) substrates. The resistivity of the GZO films grown at 290 °C on glasssubstrates ranged from 4 × 10~(-2)Ωcm to 3 × 10~(-4)for Ga/Zn supply ratios from 0 % 0.5 %.The growth of the GZO films at a low temperature of 90 °C was also performed on glass, PET, andPC substrates. When the Ga/Zn supply ratios were 0.05 — 0.1 %, the 90 °C-grown GZO films onglass substrates showed resistivities similar to those of 290 °C-grown GZO films. The 90 °C-grownGZO films on PET and PC substrates showed resistivities of 1 × 10~(-3)Ωcm and 4 × 10~(-4)Ωcm,respectively. The Hall carrier density was 8 × 10~(20)cm~(-3), which was almost the same value as thatof the 90 °C-grown GZO films on glass substrates. The GZO films on PET and PC substrates alsoshowed visible transparency as good as that of the GZO films on glass substrates, and the averagetransmittance in the visible region was higher than 85 %.