Characteristics of Polycrystalline 3C-SiC Microresonators for Various Nitrogen Doping Concentrations

摘要

This paper describes the various in the characteristics of polycrystalline (poly) 3C-SiC microresonators with 3 x 10(17) similar to 1 x 10(19) cm(-3) in-situ N-doping concentrations. The 1.2-mu m-thick cantilevers and the 0.4-mu m-thick doubly-clamped beam microresonators with various lengths were implemented using in-situ doped poly 3C-SiC thin films. The characteristics of the poly 3C-SiC microresonators were evaluated using quartz and a laser vibrometer under vacuum at room temperature. The resonant frequencies of the SiC microresonators decreased with increasing doping concentration owing to a reduction of the Young's modulus of the poly 3C-SiC thin films. We confirmed that the resonant frequencies of the poly 3C-SiC microresonators could be controllable by adjusting the doping concentrations.