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首页> 外文期刊>Journal of the European Ceramic Society >Electrochemical corrosion of silicon carbide ceramics in sodium hydroxide
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Electrochemical corrosion of silicon carbide ceramics in sodium hydroxide

机译:氢氧化钠中碳化硅陶瓷的电化学腐蚀

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摘要

Sintered silicon carbide ceramics have found widespread use due to their high corrosion stability. This corrosion stability can be affected by electrochemical processes. Electrochemical corrosion experiments conducted on an SSiC material in NaOH at different voltages and subsequent detailed investigation of the formed surfaces were carried out. Systematic local measurement of the corrosion rate was carried out using the AFM technique. The results revealed the recession of the SiC grain surfaces under anodic electrochemical loading, with the extents differing strongly from grain to grain. The recession rates were not found to correlate with the SiC grain orientations or polytypes. Rather, the data and the observed microstructure indicated that the behaviour was caused by variations in the resistivities of the grain boundaries.
机译:烧结碳化硅陶瓷由于其高的腐蚀稳定性而被广泛使用。这种腐蚀稳定性会受到电化学过程的影响。在NaOH中以不同电压在SSiC材料上进行了电化学腐蚀实验,随后对形成的表面进行了详细的研究。使用AFM技术对腐蚀速率进行系统的局部测量。结果表明,在阳极电化学负载下,SiC晶粒表面的凹陷程度随晶粒的不同而有很大差异。未发现衰退速率与SiC晶粒取向或多型性相关。相反,数据和观察到的微观结构表明,行为是由晶界电阻率的变化引起的。

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