Results from an investigation of chemical vapor deposition of aluminum oxide from dimethylaluminum isopropoxide as a function of deposition temperature at a total pressure of 1.5 mTorr are reported. An effective activation energy for this process was determined to be 85 kFmol. Depositedfilms were shown to be oxygen-rich compared to Al203 , with higher deposition temperatures resulting in films closer to stoichiometric alumina. Carbon content of the films increased from approximately 1 to 8 at.% at substrate temperatures of 417 and 659℃, respectively.
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