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首页> 外文期刊>Journal of the European Ceramic Society >Effect of ZnO on the microstructure and electrical properties of ceramics
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Effect of ZnO on the microstructure and electrical properties of ceramics

机译:ZnO对陶瓷微观结构和电性能的影响

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摘要

The aim of the present work is to explore the possibility of incorporate a small amount of ZnO to improve the microstructure control of W-doped BIT-based materials. Two different processing routes have been used according to previous results reported for other materials: reaction and sintering in one single step and a previous calcination step. The sintering behaviour of the samples, the obtained crystalline phases and the microstructure analysis indicate that the reaction between ZnO and Bi_2O_3 plays a critical role during sintering. Both Bi_2Ti_2O_7 and Zn_2TiO_4 secondary phases are stabilized when adding ZnO. Actually, when WO_3 and ZnO are incorporated simultaneously to BIT materials, they interact stabilizing the Bi_2Ti_2O_7 phase and avoiding the incorporation of W~(6+) into the BIT lattice. As a consequence, the electrical conductivity of the samples with ZnO is two orders of magnitude higher than that of the samples doped only with WO_3, suggesting that WO_3 does not form a solid solution with BIT. The curve dielectric constant vs temperature also reveals the role played by the Bi_2Ti_2O_7 phase.
机译:本工作的目的是探索掺入少量ZnO以改善W掺杂BIT基材料的微观结构控制的可能性。根据先前报道的其他材料的结果,已经使用了两种不同的加工路线:一个步骤中的反应和烧结以及之前的煅烧步骤。样品的烧结行为,获得的晶相和显微组织分析表明,ZnO与Bi_2O_3之间的反应在烧结过程中起着至关重要的作用。添加ZnO时,Bi_2Ti_2O_7和Zn_2TiO_4二次相均稳定。实际上,当WO_3和ZnO同时掺入BIT材料时,它们相互作用稳定Bi_2Ti_2O_7相,避免了W〜(6+)掺入BIT晶格。结果,具有ZnO的样品的电导率比仅掺杂有WO_3的样品的电导率高两个数量级,这表明WO_3不会与BIT形成固溶体。介电常数与温度的关系曲线也揭示了Bi_2Ti_2O_7相所起的作用。

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