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首页> 外文期刊>Journal of the European Ceramic Society >Varistors based in the ZnO-Bi_2O_3 system: Microstructure control and properties
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Varistors based in the ZnO-Bi_2O_3 system: Microstructure control and properties

机译:基于ZnO-Bi_2O_3系统的压敏电阻:组织控制和性能

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摘要

The present contribution deals with the development of an empirical approach that will describe the evolution of the breakdown voltage in ZnO-based varistors as a function of the sintering variables. This relationship is described through the kinetic analysis of the grain growth process. It is found that for a certain range of sintering conditions the varistor breakdown voltage could be calculated from the average size that zinc oxide grains achieve, provided that the varistor microstructure evolves in a gradual and controlled manner and the distribution of the electrical interphases remains stable.
机译:本贡献涉及一种经验方法的发展,该方法将描述基于ZnO的压敏电阻击穿电压随烧结变量的变化。通过对晶粒生长过程的动力学分析来描述这种关系。已经发现,对于一定范围的烧结条件,只要压敏电阻的微观结构以渐进和受控的方式发展并且电相的分布保持稳定,就可以根据氧化锌晶粒的平均尺寸来计算压敏电阻的击穿电压。

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