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首页> 外文期刊>Journal of Semiconductors >Magneto-polaron induced intersubband optical transition in a wide band gap II-VI semiconductor quantum dot
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Magneto-polaron induced intersubband optical transition in a wide band gap II-VI semiconductor quantum dot

机译:宽带隙II-VI半导体量子点中磁极化子诱导的子带间光跃迁

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摘要

Effects of LO-phonon contribution on the electronic and the optical properties are investigated in a Cd_(0.8)Zn_(0.2)Se/ZnSe quantum dot in the presence of magnetic field strength. The magneto-polaron induced hydrogenic binding energy as a function of dot radius in the wide band gap quantum dot is calculated. The oscillator strength and the spontaneous lifetime are studied taking into account the spatial confinement, magnetic field strength and the phonon contribution. Numerical calculations are carried out using variational formulism within the single band effective mass approximation. The optical properties are computed with the compact density matrix method. The magneto-polaron induced optical gain as a function of photon energy is observed. The results show that the optical telecommunication wavelength in the fiber optic communications can be achieved using CdSe/ZnSe semiconductors and it can be tuned with the proper applications of external perturbations.
机译:在存在磁场强度的情况下,在Cd_(0.8)Zn_(0.2)Se / ZnSe量子点中研究了LO声子对电子和光学性质的影响。计算宽带隙量子点中磁极化子诱导的氢结合能与点半径的关系。考虑到空间限制,磁场强度和声子贡献,研究了振荡器的强度和自发寿命。使用单带有效质量近似内的变分公式进行数值计算。用致密密度矩阵法计算光学性质。观察到磁极化子诱导的光增益随光子能量的变化。结果表明,使用CdSe / ZnSe半导体可以实现光纤通信中的光通信波长,并且可以通过适当地应用外部干扰来对其进行调谐。

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