首页> 外文期刊>Journal of Superconductivity and Novel Magnetism >First-Principle Investigations of Structural, Electronic, and Half-Metallic Ferromagnetic Properties in In_(1-x)TM_xP (TM = Cr, Mn)
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First-Principle Investigations of Structural, Electronic, and Half-Metallic Ferromagnetic Properties in In_(1-x)TM_xP (TM = Cr, Mn)

机译:In_(1-x)TM_xP(TM = Cr,Mn)中结构,电子和半金属铁磁特性的第一性原理研究

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摘要

First-principle calculations within the framework of density functional theory are employed to study the structural, electronic, and half-metallic ferromagnetic properties of In_(1-x)TM_xP (TM = Cr, Mn) at concentrations (x = 0.0625, 0.125, 0.25) of transition metal (TM) in zinc blende phase. The investigations of electronic and magnetic properties indicate that In_(1-x)TM_xP (TM = Cr, Mn) at x = 0.0625, 0.125, and 0.25 are half-metallic ferromagnets with 100% magnetic spin polarization. On the one hand, the total magnetization is an integer Bohr magneton of 3μ_B and 4μ_B for In_(1-x)Cr_xP and In_(1-x)Mn_xP, respectively, which confirms the half-metallic feature of In_(1-x)TM_xP compounds. On the other hand, the densities of states of majority-spin states show that the large hybridization between 3p (P) and 3d (TM) partially filled states dominates the gap, which stabilizes the ferromagnetic state configuration associated with double-exchange mechanism. The band structures depict that half-metallic gap at x = 0.0625 is 0.404 eV for In_(1-x)Cr_xP which is higher than 0.125 eV for In_(1-x)Mn_xP. Therefore, the largest half-metallic gap in In_(1-x)Cr_xP at low concentration x = 0.0625 reveals that Cr-doped InP seem to be a more potential candidate than that Mn-doped InP for spin injection applications in the field of spintronic devices.
机译:在密度泛函理论框架内的第一性原理计算用于研究In_(1-x)TM_xP(TM = Cr,Mn)在浓度(x = 0.0625,0.125, 0.25)的过渡金属(TM)混合在锌中。对电子和磁性的研究表明,在x = 0.0625、0.125和0.25处的In_(1-x)TM_xP(TM = Cr,Mn)是具有100%磁性自旋极化的半金属铁磁体。一方面,对于In_(1-x)Cr_xP和In_(1-x)Mn_xP,总磁化强度分别为3μB和4μB的整数玻尔磁子,这证实了In_(1-x)的半金属特征TM_xP化合物。另一方面,多数自旋态的态密度表明,3p(P)和3d(TM)部分填充态之间的大杂化占主导地位,从而稳定了与双交换机制相关的铁磁态构型。能带结构表明,对于In_(1-x)Cr_xP,在x = 0.0625处的半金属间隙为0.404 eV,而对于In_(1-x)Mn_xP,该半金属间隙高于0.125 eV。因此,在低浓度x = 0.0625时In_(1-x)Cr_xP中最大的半金属间隙表明,在自旋电子学领域中,自旋注入应用中,掺杂Cr的InP似乎比掺杂Mn的InP更有潜力。设备。

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