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Roles of Extended and Localized States in the Magnetic and Transport Properties of GaMnAs Alloys

机译:GaMnAs合金的扩展态和局域态在磁性和输运性质中的作用

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We investigate the spin-polarized transport of holes in GaMnAs/GaAs heterostructures with Mn concentration 5% in which a ferromagnetic order is known to exist. Disorder enters the problem both in the random distribution of Mn centers and impurities, and also in the orientation of the magnetic moments at the Mn sites. We take into account the existence of an impurity band determining the extended or localized nature of the states at and near the Fermi level. Magnetic order and resistivity are inter-related due to the influence of the spin polarization of the impurity band and the effect of the Zeeman splitting on the mobility edge. We obtain two channels of transport, one provided by the extended states above the mobility edge, when this lies below the Fermi level, the other coming out of the thermal excitation of the localized states through a hopping mechanism. We discuss the competition between these two channels in determining, once having obtained the dependence of the resistance on temperature, the metallic or non-metallic nature of the sample.
机译:我们研究了锰浓度为5%的GaMnAs / GaAs异质结构中空穴的自旋极化传输,其中已知存在铁磁序。无序性不仅在Mn中心和杂质的随机分布中,而且在Mn位点处的磁矩的取向上都成为问题。我们考虑了杂质带的存在,该杂质带决定了费米能级附近的状态的扩展或局部性质。由于杂质带的自旋极化的影响和塞曼分裂对迁移率边缘的影响,磁阶和电阻率是相互关联的。我们获得了两个传输通道,一个由迁移率边缘上方的扩展状态提供,而当其位于费米能级以下时,另一个通过跳变机制来自局部状态的热激发。一旦确定了电阻对温度的依赖性,样品的金属或非金属性质,我们将讨论确定这两个通道之间的竞争。

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