Facile preparation of vanadium oxide thin films on sapphire(0001) by sol-gel method

摘要

Vanadium oxide (VO_x) thin films were deposited onto sapphire by sol-gel method at various preparation conditions. The films with soaking time of 1 h present V2O3(006) preferred orientation. As the annealing temperature increasing from 430 to 580 °C, the ratio of the V2O3 compound in the obtained film increases, and the related crystallinity improves as well. However, the films with soaking time of 7 h show high-oriented VO2(020) structure instead of V2O3(006), showing clear grain structure and distinct phase transition property. Based on the process of thermal decomposition of predecessor, a reduction mechanism has been proposed to explain the current experimental results well.