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首页> 外文期刊>Journal of Physics. Condensed Matter >Suppression of Mott-Hubbard states and metal-insulator transitions in the two-band Hubbard model
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Suppression of Mott-Hubbard states and metal-insulator transitions in the two-band Hubbard model

机译:两频带Hubbard模型中Mott-Hubbard态和金属-绝缘体跃迁的抑制

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I investigate band and Mott insulating states in a two-band Hubbard model, with the aim of understanding the differences,between the idealized one-orbital model and the more realistic multi-band case. Using a projection ansatz I show that. additional orbitals suppress the metal-insulator transition, leading to a critical coupling of approximately eight times the bare bandwidth. I also demonstrate the effects of orbital ordering, which hinder Mott-Hubbard states and open a bandgap. Since multi-band correlations are common in real materials, this work suggests that very strongly correlated band insulators may be more common than Mott-Hubbard insulators.
机译:为了理解理想化的单轨道模型与更现实的多频带情况之间的差异,我研究了两频带Hubbard模型中的频带和Mott绝缘态。我使用投影ansatz演示了这一点。附加的轨道抑制了金属-绝缘体的过渡,从而导致临界耦合约为裸带宽的八倍。我还演示了轨道有序效应,这种效应会阻碍Mott-Hubbard的状态并打开能隙。由于在实际材料中多频带相关性很常见,因此这项工作表明,具有很强相关性的频带绝缘子可能比Mott-Hubbard绝缘子更为普遍。

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