Comparison of strain fields in truncated and un-truncated quantum dots in stacked InAs/GaAs nanostructures with varying stacking periods

摘要

Strain fields in truncated and un-truncated InAs quantum dots with the same height and base length have been compared numerically when the dots are vertically stacked in a GaAs matrix at various stacking periods. The compressive hydrostatic strain in truncated dots decreases slightly as compared with the un-truncated dots without regard to the stacking period studied. However, the reduction in tensile biaxial strain, compressive radial strain and tensile axial strain was salient in the truncated dot and the reduction increased with decreasing stacking period. From such changes in strain, changes in the band gap and related properties are anticipated. [References: 45]