Modulation transfer function of photoconductive x-ray image detectors: effects of charge carrier trapping

摘要

An analytical expression for calculating the modulation transfer function (MTF) due to distributed carrier trapping in the bulk of the photoconductor of a direct conversion pixellated x-ray image detector is derived using the trapped charge distribution across the photoconductor. The analytical expressions of trapped charge distributions are also derived by solving the continuity equation for both types of carriers (electrons and holes). The MTF of photoconductive x-ray detectors is analysed in terms of normalized parameters, namely (a) the normalized x-ray absorption depth (absorption depth/photoconductor thickness) and (b) normalized carrier schubwegs (schubweg/thickness). Trapping of the carriers that move towards the pixel electrodes degrades the MTF performance, whereas trapping of the carriers that move away from the pixels improves the sharpness of the x-ray image. The MTF model is applied to polycrystalline CdZnTe detectors and is fitted to recently published experimental results. The theoretical model shows very good agreement with reported experimental data. [References: 22]