Investigations on implantation doping of wide-bandgap II-VI compounds using radioactive dopants

摘要

Ion implantation of radioactive isotopes of host elements which transmute into relevant acceptors or donors were performed on II-VI compounds. Experiments with PAC measurements, the radio tracer technique and classical electrical methods of semiconductor physics (C-V, Hall effect) were performed to investigate the implantation damage, the diffusion and incorporation of implanted dopants and their doping effects. These measurements revealed that even the incorporation of host elements strongly depends on non-stoichiometry of the well defined preannealed II-VI samples. The dopants Ag, As, Rb and In were incorporated substitutionally via transmutation from host isotopes at lattice sites and act as efficient acceptors and donors respectively.