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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Influence of the sintering temperature on the electrical properties of Ce-doped WO3 ceramics prepared from nano-powders
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Influence of the sintering temperature on the electrical properties of Ce-doped WO3 ceramics prepared from nano-powders

机译:烧结温度对纳米粉掺杂Ce掺杂WO3陶瓷电性能的影响

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Using a nm-level powder fabricated by a wet chemical method as precursor, the CeO2-doped WO3 ceramics were prepared by the conventional solid state reaction at sintering temperatures from 600 to 1100 °C. The x-ray diffraction analysis reveals the coexistence of different WO3 phases in the samples sintered at temperatures below 900 ℃, whereas a single phase appears in the samples sintered above 1000 ℃. No new Ce–W compound appears. As the sintering temperature increases, the electrical properties of the samples display an interesting transformation from linear to nonlinear behaviour. The measurements of scanning electron microscope, complex impedance and electrical stability indicate that a lot of grain boundary regions in the samples sintered at low temperatures strongly influences the electrical transportation. Therefore, the electrical nonlinearity is due to a basic process controlled by the back-to-back Schottky barriers at grain boundaries with suitable thickness as well as the coexistence of phases.
机译:使用通过湿化学法制造的纳米级粉末作为前体,通过常规的固态反应在600至1100°C的烧结温度下制备了CeO2掺杂的WO3陶瓷。 X射线衍射分析表明,在低于900℃的温度下烧结的样品中,不同的WO3相共存,而在高于1000℃的温度下烧结的样品中存在单相。没有新的Ce-W化合物出现。随着烧结温度的升高,样品的电性能表现出从线性到非线性的有趣转变。扫描电子显微镜,复阻抗和电稳定性的测量结果表明,在低温下烧结的样品中的许多晶界区域强烈地影响电传输。因此,电非线性是由于基本过程受晶界上背对背的肖特基势垒所控制,具有适当的厚度以及相的共存。

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