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首页> 外文期刊>Journal of nonlinear optical physics & materials >Hologram recording and erasure in GaAs:Cr with simultaneously applied electric and magnetic fields
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Hologram recording and erasure in GaAs:Cr with simultaneously applied electric and magnetic fields

机译:同时施加电场和磁场的GaAs:Cr中的全息图记录和擦除

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Externally applied fields play crucial role in the enhancement of space charge electric field (E_(sc)) in photorefractive (PR) materials. Using band-charge transport model, E_(sc) (~10~5V/m) is obtained in presence of externally applied dc electric (E_0) and magnetic (B_0) fields simultaneously. Numerical estimation of GaAs:Cr shows that in presence of externally applied fields (optimum value of E_0 = 5 × 10~2 V/m and B_0 = 640 gauss), diffraction efficiency ~90% can be observed. To further elaborate the above result, a typical behavior of recording and erasure of hologram with respect to time has been investigated. Result manifest that GaAs:Cr is efficient, ultrafast writing and erasing media for PR-grating.
机译:外部施加的场在增强光折射(PR)材料中的空间电荷电场(E_(sc))中起着至关重要的作用。使用带电荷传输模型,在同时存在外部施加的直流电场(E_0)和磁场(B_0)的情况下获得E_(sc)(〜10〜5V / m)。 GaAs:Cr的数值估算表明,在外加电场的情况下(最佳值E_0 = 5×10〜2 V / m,B_0 = 640高斯),衍射效率约为90%。为了进一步阐述上述结果,已经研究了相对于时间的全息图的记录和擦除的典型行为。结果表明,GaAs:Cr是用于PR光栅的高效,超快写入和擦除介质。

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