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首页> 外文期刊>Journal of Molecular Structure >1,1,2,2-tetrachlorodisilane (Cl_2HSi-SiHCl_2): molecular structure, conformation and torsional potential as determined by gas-phase electron diffraction, vibrational spectroscopic data and ab initio molecular orbital calculations
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1,1,2,2-tetrachlorodisilane (Cl_2HSi-SiHCl_2): molecular structure, conformation and torsional potential as determined by gas-phase electron diffraction, vibrational spectroscopic data and ab initio molecular orbital calculations

机译:1,1,2,2-四氯乙硅烷(Cl_2HSi-SiHCl_2):通过气相电子衍射,振动光谱数据和从头算分子轨道计算确定的分子结构,构象和扭转势

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摘要

The molecular structure, conformational composition and torsional potential of 1,1,2,2-tetrachlorodisilane (TCDS), Cl_2HSiSiHCl_2, were studied using gas phase electron diffraction (GED) data at 23 deg C, together with earlier recorded spectroscopic data and normal coordinate- and ab initio molecular orbital calculations. The title compound exists in the gas phase at room temperature as a mixture of two conformers, anti, with a torsion angle #phi#(HSiSiH) = 180 deg, and gauche, with a torsion angle #phi#(HSiSiH) approx= 60 deg C. The gauche conformer predominates, occupying approximately 80% of the gas composition at 23 deg C. Some structural parameter values obtained from the GED refinements, using results from the earlier spectroscopic work and ab initio molecular orbital calculations as constraints, are as follows (gauche conformer with estimated 2#sigma# uncertainties): bond lengths (r_g): r(Si-Si) = 2.310(8) A, r<(Si-Cl)>= 2.039(2) A (average value), r(Si-H) = 1.511 A (assumed value). Bond angles (angle #alpha#): angle = 108.9(4) deg (average value), angle ClSiCl = 109.7(3) deg, angle SiSiH = 111.5 deg (assumed value).
机译:利用23℃下的气相电子衍射(GED)数据,以及较早记录的光谱数据和正态坐标,研究了1,2,2,2-四氯乙硅烷(TCDS)Cl_2HSiSiHCl_2的分子结构,构象组成和扭转势-和从头算分子轨道计算。标题化合物在室温下以气相存在的形式存在,是两个构象异构体的混合物,扭转角为#phi#(HSiSiH)= 180度的反构异构体和扭转角为#phi#(HSiSiH)大约= 60的薄纱形式gauche构象构型占主导地位,在23℃下约占气体组成的80%。GED精制获得的一些结构参数值,是根据早期光谱工作的结果和从头算分子轨道计算得出的,如下所示。 (具有估计的2#sigma#不确定性的gauche构象异构体):键长(r_g):r(Si-Si)= 2.310(8)A,r <(Si-Cl)> = 2.039(2)A(平均值), r(Si-H)= 1.511 A(假定值)。结合角(角度#α#):角度 = 108.9(4)度(平均值),角度ClSiCl = 109.7(3)度,角度SiSiH = 111.5度(假定值)。

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