Strain sensors based on twin and uniform crystals of TCNQ Ion-radical salts

摘要

An investigation was made on the properties of organic semiconductor resistance strain sensors, fabricated on the basis of quasi-one dimensional ion-radical salts of tetracyanoquinodimethane (TCNQ) crystals, namely, three phenyl methyl phosphonium (Ph3Me(TCNQ)(2)) and 2N methyl-methyl tiuronium (2CH(3)MT(TCNQ)(2)). It was observed that, the sensitivity of resistance strain sensors, based on twinned crystals, grown by chemical process is significantly large up to 4000-6000, as compared to uniform crystals. Elastic steel beams were employed to measure the sensitivity of these sensors