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首页> 外文期刊>Journal of optoelectronics and advanced materials >Dielectric properties of the (1-x)BiFeO3-xBaTiO(3) multiferroic ceramics
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Dielectric properties of the (1-x)BiFeO3-xBaTiO(3) multiferroic ceramics

机译:(1-x)BiFeO3-xBaTiO(3)多铁陶瓷的介电性能

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The solid solutions of (1-x)BiFeO3 - xBaTiO(3) With x=0.20 and x=0.30 have been prepared via solid state, by sintering in air or in oxygen atmosphere. Optimum calcination and sintering strategy for obtaining pure perovskite phase, dense ceramics (>97% relative density) and homogeneous microstructures have been determined. Rhombohedral structure for x=0.20 and a pseudo-cubic one (low distortion) for the x=0.30 ceramics were obtained. In spite of the excellent microstructures and phase purity, the ferroelectric-paraelectric transitions at similar to 145 degrees C and similar to 230 degrees C for x=0.30 and x=0.20, respectively, found by differential calorimetry study were not confirmed by the dielectric spectroscopy investigations. The dielectric response shows multiple relaxations, high losses mainly at low frequency and high temperatures, which are signs of space charge or Maxwell Wagner phenomena. The complex impedance response for the ceramics sintered in oxygen shows in addition grain boundary effects. It results that in such ceramics, the dielectric response is strongly affected by the extrinsic phenomena rather than by the intrinsic ferroelectric response. The extrinsic properties are impossible to be fully controlled by normal ceramic processing. However, at room temperature and frequencies above 500 kHz, even these ceramics accomplish the dielectric properties requirements for further magnetoelectric applications.
机译:x = 0.20和x = 0.30的(1-x)BiFeO 3 -xBaTiO(3)的固溶体已经通过固态,在空气或氧气气氛中烧结而制备。确定了获得纯钙钛矿相,致密陶瓷(相对密度> 97%)和均质微观结构的最佳煅烧和烧结策略。获得了x = 0.20的菱形结构和x = 0.30陶瓷的伪立方结构(低畸变)。尽管具有出色的微观结构和相纯度,但差示量热法研究发现,对于x = 0.30和x = 0.20,铁电-顺电转变分别接近145摄氏度和相似于230摄氏度,而介电谱法并未证实调查。介电响应主要在低频和高温下表现出多重弛豫,高损耗,这是空间电荷或麦克斯韦·瓦格纳现象的迹象。在氧气中烧结的陶瓷的复阻抗响应还显示出晶界效应。结果表明,在这种陶瓷中,介电响应受外在现象的影响很大,而不是受固有铁电响应的影响。通过常规的陶瓷加工不可能完全控制外在性能。但是,在室温和高于500 kHz的频率下,即使这些陶瓷也满足了进一步磁电应用的介电性能要求。

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